In stock
What this board is
-55℃~+150℃ 13A 150mΩ 1pF 30pF 4V 52W 598pF 650V 8nC E-mode DFN8x8-3L GaN Transistors(GaN HEMT) ROHS
Technical specifications
Grouped parametric data from the catalog record.
No specifications yet
Specifications are being indexed from datasheets. Check back or upload a datasheet.
Stock & lead time
Regional availability and warehouse information.
| Warehouse / Region | Quantity | Est. dispatch |
|---|---|---|
| Kathmandu Nepal | Contact for availability | 4–6 business days ⚠ |
| New Delhi India | Contact for availability | 3–5 business days ⚠ |
| Shenzhen China | Contact for availability | 4–6 business days ⚠ |
| Dubai UAE | Contact for availability | 3–5 business days ⚠ |
Documents & resources
Datasheets, application notes, and reference designs.
| Datasheet for MGZ18N65 Datasheet |
Compliance & certifications
Environmental, safety, and trade compliance data.
Compliance data pending
RoHS, REACH, and ECCN data is being verified against manufacturer documentation.
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